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| H11C4/ H11C5/ H11C6 Vishay Semiconductors Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current Features * * * * * * * * Turn on current (IFT), 5.0 mA typical Gate trigger current (IGT), 20 mA typical Surge anode current, 5.0 A Blocking voltage, 400 V gate trigger voltage (VGT), 0.6 V typical Isolation test voltage 5300 VRMS Solid State reliability Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A1 C2 NC 3 6G 5A 4C i179006 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection Order Information Part H11C4 H11C5 H11C6 H11C4-X006 H11C6-X009 Remarks IFT 11 mA, DIP-6 IFT 11 mA, DIP-6 IFT 14 mA, DIP-6 IFT 11 mA, DIP-6 400 mil (option 6) IFT 14 mA, SMD-6 (option 9) Description The H11C4/ H11C5/ H11C6 are optically coupled SCRs with a gallium arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. These optocouplers can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. The H11C4 and H11C5 are identical and have a maximum turn-on-current of 11 mA. The H11C6 has a maximum of 14 mA. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Peak forward current Power dissipation Derate linearly from 25 C 1.0 ms, 1 % Duty Cycle Test condition Symbol VRM IF IFM Pdiss Value 6.0 60 3.0 100 1.33 Unit V mA A mW mW/C Document Number 83610 Rev. 1.6, 26-Oct-04 www.vishay.com 1 H11C4/ H11C5/ H11C6 Vishay Semiconductors Output Parameter Reverse gate voltage Anode voltage RMS forward current Surge anode current Peak forward current Surge gate current Power dissipation Derate linearly from 25C 10 ms duration 100 s, 1% Duty Cycle 5.0 ms duration DC or AC peak Test condition Symbol VRG VA IFRMS IAS IFM IGS Pdiss Value 6.0 400 300 5.0 10 200 1000 13.3 Unit V V mA A A mA mW mW/C Coupler Parameter Isolation test voltage (between emitter and detector referred to standard climate 23 C/ 50 % RH, DIN 50014) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total package dissipation Derate linearly from 25 C Operating temperature range Storage temperature range Lead soldering time at 260 C Tamb Tstg RIO RIO Ptot Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 175 1012 1011 400 5.5 - 55 to + 100 - 55 to + 150 10 mm mm mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 3.0 V VR = 0, f = 1.0 MHz Symbol VF IR CO 50 Min Typ. 1.2 Max 1.5 10 Unit V A pF Output Parameter Forward blocking voltage Reverse blocking voltage On-state voltage Holding current Test condition RGK = 10 K, TA = 100 C, Id = 150 A RGK = 10 K, TA = 100 C, Id = 150 A IT = 300 mA RGK = 27 K, VFX = 50 V Symbol VDM VDM Vt IH Min 400 400 1.1 1.3 500 Typ. Max Unit V V V A www.vishay.com 2 Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors Parameter Gate trigger voltage Forward leakage current Reverse leakage current Gate trigger current Capacitance, Anode to gate Capacitance, Gate to cathode Test condition VFX = 100 V, RGK = 27 k, RL=10 K RGK = 10 K, VRX = 400 V, IF = 0, TA = 100 C RGK = 10 K, VRX = 400 V, IF = 0, TA=100 C VFX = 100 V, RRG = 27 K, RL = 10 K V = 0, f = 1.0 MHz V = 0, f = 1.0 MHz Symbol VGT IR IR IGT Min Typ. 0.6 150 150 20 20 350 50 Max 1.0 Unit V A A A pF pF Coupler Parameter Turn-on current Test condition VDM = 50 V, RGK = 10 K Part H11C4 H11C5 H11C6 VDM = 100 V, RGK = 27 K H11C4 H11C5 H11C6 Symbol IFT IFT IFT IFT IFT IFT 5.0 5.0 7.0 Min Typ. Max 20 20 30 11 11 14 Unit mA mA mA mA mA mA Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Document Number 83610 Rev. 1.6, 26-Oct-04 www.vishay.com 3 H11C4/ H11C5/ H11C6 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. 18493 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .315 (8.00) min. 15 max. www.vishay.com 4 Document Number 83610 Rev. 1.6, 26-Oct-04 H11C4/ H11C5/ H11C6 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83610 Rev. 1.6, 26-Oct-04 www.vishay.com 5 |
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